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Douglas
Buchanan |
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Buchanan is an established researcher in the field of physics and engineering of microelectronic materials and devices. His work has directly impacted the design and implementation of new materials for gate dielectrics and metals used in current state-of-the-art CMOS electronic devices. His work has been recognized as a strategic area for the University and he has been recently awarded a Tier 2 CRC in Microelectronic Materials. He will use ESCA/Auger, SIMS and SPM to investigate the physical and chemical nature of dielectric films to be developed for use in the microelectronic industry and in the development of future generations of CMOS devices, sensors and nanoelectronic devices. |
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