Conference Papers and Presentations

80.T. A. Emadi, and D. A. Buchanan, “Development of a 6×6 element air-coupled multiple moving membrane capacitive micromachined ultrasonic transducer array, M3-CMUT, for high resolution detection applications,” The 28th European Conference on Solid-State Transducers, EuroSensors2014, Italy (2014).

79.T. A. Emadi, and D. A. Buchanan, “The influence of eliminating fixed electrode from an air-coupled dual deflectable membrane capacitive micromachined ultrasonic transducer,” IEEE International Ultrasonic Symposium, IL, USA (2014).

78.T. A. Emadi, and D. A. Buchanan, “Inverse biasing capability of a dual deflectable membrane MEMS ultrasonic transducer for medical applications”, 2014 IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices, and Workshop on Piezoresponse Force Microscopy (ISAF/IWATMD/PFM), PA, USA, (2014).

77.G. Thomas , T. A. Emadi, J. Mijares-Chan, and D. A. Buchanan, “Low-frequency ultrasound NDT of power cable insulation”, IEEE International Instruments and Measurements Technology Conference, Uruguay (2014)

76.T. A. Emadi, and D. A. Buchanan, Development of a novel configuration for a MEMS transducer for low bias and high resolution imaging applications, SPIE Photonic West, MOEMS-MEMS Conference, San Francisco, USA (2014).

75.M. O. Tareq, M. R. Kumar, M. S. Freund, and D. A. Buchanan, An extended floating gate gas sensor using polypyrrole as a sensing polymer, Sixth International Conference on Sensing Technology (ICST), Kolkata, India (2012).

74.T. A. Emadi, G. Thomas, S. Pistorius, and D. A. Buchanan, Design and analysis of a wide bandwidth immersion MEMS transducer array for fault detection in power cables, IEEE Sensors 2012, Taipei, Taiwan (2012).

73.T. A. Emadi, G. Thomas, S. Pistorius, and D. A. Buchanan, Capacitive micromachined ultrasonic transducer array with pencil beam shape and wide range beam steering, in Proceeding Engineering, The 26th European Conference on Solid-State Transducers, EuroSensors XXVI, vol. 47, pp. 542-545, Krakow, Poland (2012).

72.T. A. Emadi, G. Thomas, S. Pistorius, and D. A. Buchanan, A MEMS ultrasonic transducer imager array – with beam width, acoustic power, and frequency modulations, IEEE International Conference on Imaging Systems and Techniques, Manchester, UK (2012).

71.Minko, G. S. Belo, S. Rudenja, and D. A. Buchanan, Effect of Low Power Deposition and Low Oxidation Temperature on the Interfacial and Structural Properties of sputtered HfO2 Gate Dielectrics, presented at MRS Fall Meeting 2011, Boston MA (2011).

70.I. Yahyaie, D. A. Buchanan, D. J. Thomson, G. E. Bridges, and D. R. Oliver, "Electrostatic Imaging of the Interference Pattern Created by Reflected Rayleigh Waves," in 15th Canadian Semiconductor Ascinec and Technology Conference Vancouver BC, Canada, 2011.

69.N. Masood, G. Ferrier, D. J. Thomson, and D. A. Buchanan, "Performance of a multi-electrode silicon-based dielectrophoretic cage device using four electrical contacts," in 36th International Conference on Micro and Nano Engineering Genoa, Italy, 2010.

68.D. A. Buchanan, "Olfactory Chemical Sensors Design Using a tandard CMOS Process (Invited)," in CMOS: Emerging Technologies Whistler B.C., 2010.

67.I. Yahyaie, D. R. Oliver, D. A. Buchanan, D. J. Thomson, and G. E. Bridges, "Dynamic Heterodyned Polarization Imaging: Studying Polarization Dynamics in Materials at Gigahertz Frequencies," in 14th Canadian Semiconductor Technology Conference McMaster University, Hamilton, ON, Canada, 2009.

66.P. Patel, D. A. Buchanan, and R. M. Wallace, "Materials Research Society (MRS) Spring Meeting," in Materials Research Society Spring Meeting San Francisco, CA U.S.A. , 2008.

65.J. T. English, K. J. Cao, B. A. Deore, D. A. Buchanan, and M. S. Freund, "Floating gate field-effect transistors with broadly-responsive conducting polymers films as volatile organic compound sensors," in The 90th Canadian Chemistry Conference and Exhibition Winnipeg, Manitoba, Canada, 2007.

64.K. Cao, J. T. English, D. A. Buchanan, and M. S. Freund, "A Chemical Sensor Design Using a Standard CMOS Process," in 13th Canadian Semiconductor Technology Conference (CSTC) Montreal Canada, 2007.

63.D. Felnhofer, E. Gusev, and D. Buchanan, "Photocurrent-Voltage Measurements for Characterizing Oxide Charge in Hf02 Gate Dielectrics," in Electronic Materials Conference University Park, PA USA, 2006.

62.D. Buchanan and D. Felnhofer, "On the Characterization of Electronically Active Defects in High-k Gate Dielectrics," in NATO Advanced Research Workshop on Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices. vol. 216: Springer NATO Series, 2006, p. p. 42.

61.D. Felnhofer, E. P. Gusev, P. Jamison, and D. A. Buchanan, "Charge Trapping and Detrapping in HfO2 High-k MOS Capacitors Using Internal Photoemission," in Insulating Films On Semiconductors, INFOS 2005. vol. 80 Leuven, Belgium: Microelectronic Engineering, 2005, pp. 59-61.

60.M. Dragosavac, D. J. Paul, M. Pepper, A. B. Fowler, and D. A. Buchanan, "Electron effective mass enhancement in ultrathin gate-oxide Si-MOSFETs," in 27th International Conference on the Physics of Semiconductors - ICPS-27. vol. 772, J. Menéndez and C. G. V. d. Walle, Eds. Flagstaff, Arizona (USA): American Institute of Physics 2004, p. 495.

59.D. I. Buchanan, "Materials and Devices for Advanced CMOS  " in Workshop on Dielectrics in Microelectronics (WoDIM) Cork, Ireland, 2004.

58.D. I. Buchanan, "Scaling the Gate Dielectric:  Integration of High-k Gate Dielectrics CMOS Applications," in 11th Canadian Semiconductor Technology Conference Ottawa, Ontario, 2003.

57.D. I. Buchanan, "Prospects for Ultra-Thin gate Oxides and High-k Gate Dielectrics," in 9th International Conference on the Formation of Semicondutro Interfaces (ICFSI-9) Madrid Spain, 2003.

56.D. A. Buchanan, "Electronically Active Defects in Ultra-thin Oxynitride Gate Dielectrics," in Seventh International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, R. E. Sah, K. B. Sundaram, M. J. Deen, D. Landheer, W. D. Brown, and D. Misra, Eds. Paris, France: The Electrochemical Society, 2003, pp. 28-340.

55.H. Okorn-Schmidt and D. Buchanan, "Active Dopant Profiling in Poly-Si with the OCP Technique:  Can we Obtain Quantitative Information?," in Sixth International Symposium on Ultra clean processing of silicon surfaces (UCPSS-2002) Oostende, Belguim, 2002.

54.D. A. Buchanan, "Metal Gates for Advanced CMOS," in Nano and Giga Challenges in Microelectronics Moscow, 2002.

53.E. P. Gusev, E. Cartier, M. Copel, M. Gribelyuk, D. Buchanan, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski, M. Tuominen, M. Linnermo, and S. Haukka, "Ultrathin high-K dielectrics grown by atomic layer deposition:  a comparative study of Zr02, Hf02, Y203 and Al203," in Rapid Thermal and Other Short-time Processing Techniques, F. Rooseboom, P. Timans, K. G. Reid, M. C. Ozturk, D. L. Kwong, and E. P. Gusev, Eds.: Pennington Electrical Society, 2001.

52.E. P. Gusev, D. A. Buchanan, E. Cartier, A. Kumar, D. DiMaria, S. Guha, A. Callegari, S. Zafar, P. C. Jamison, D. A. Neumayer, M. Copel, M. A. Gribelyuk, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski, K. Chan, N. Bojarczuk, L.-Å. Ragnarsson, P. Ronsheim, K. Rim, R. J. Fleming, A. Mocuta, and A. Ajmera, "Ultrathin high-K gate stacks for advanced CMOS," in IEDM Technical Digest, 2001, pp. 451-454.

51.D. A. Buchanan, E. P. Gusev, E. Cartier, H. Okorn-Schmidt, K. Rim, M. Gribelyuk, A. Mocuta, A. Ajmera, M. Copel, S. Guha, N. Bojarczuk, A. Callegari, C. D'Emic, P. Kozlowski, K. Chan, R. F. Fleming, P. Jamison, J. Brown, and R. Arndt, "The application of high-K dielectrics for high performance CMOS," in MRS Workshop on Alternatives to SiO2 as Gate Dielectrics for Future Si_Based Microelectronics. vol. 567, J. Morais and I. Baumvol, Eds. Port Alegre, Brasil: MRS, 2001, p. 2.

50.H. Okorn-Schmidt, E. P. Gusev, D. Buchanan, E. Cartier, S. Guha, N. Bojarczuk, A. Callegari, and M. Copel, "Characterization of bulk and interface properties of dielectric layers and stacks," in The Physics and chemistry of Si02 and the Si-Si02 Interface-4, H. Z. Massoud, E. H. Poindexter, M. Hirose, and I. Baumvol, Eds. Pennington, NJ: The Electrochemical Society, 2000, pp. 505-511.

49.E. P. Gusev, M. Copel, E. Cartier, D. Buchanan, H. Okorn-Schmidt, M. Gribelyuk, D. Falcon, R. Murphy, S. Molis, I. Baumvol, C. Krug, M. Jussila, M. Tuominen, and S. Haukka, "Physical characterization of ultrathin films of high dielectric constant materials on silicon," in The Physics and chemistry of Si02 and the Si-Si02 Interface - 4, H. Z. Massoud, E. H. Poindexter, M. Hirose, and I. Baumvol, Eds. Pennington, NJ: The Electrochemcial Society, 2000, pp. 477-485.

48.D. A. Buchanan, E. P. Gusev, E. Cartier, H. Okorn-Schmidt, K. Rim, M. A. Gribelyuk, A. Mocuta, A. Ajmera, M. Copel, S. Guha, N. Bojarczuk, A. Callegari, C. D'Emic, P. Kozlowski, K. Chan, R. J. Fleming, P. C. Jamison, J. Brown, R. Arndt, and I. Ieee, "80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications," in International Electron Devices Meeting 2000, Technical Digest, 2000, pp. 223-226.

47.P. R. Varekamp, D. W. Kisker, D. Buchanan, M. Copel, K. Chan, and C. D'Emic, "Electrical properties of LPCVD silicon nitride films deposited onto silicon dioxide surfaces," in MRS, 1999.

46.N. Hoilen, R. Ma, T. Smith, C. Taylor, I. St. Omer, S. A. Cammpbell, W. L. Gladfelter, M. Gribelyuk, and D. Buchanan, "High permittivity gate insulatorsTi02 and Zr02," in Biennial University/Government/Industry Microelectronics Symposium, 1999, pp. 33-36.

45.D. I. Buchanan, "CMOS in the new millennium, Scaling the gate dielectric:  materials, integration and reliability," in Next Generation Materials and Devices for Si-based Microelectronics Shanghai, China, 1999.

44.D. A. Buchanan, A. Edwards, T. Hattori, and H. v. Barrelage, "Symposium T., Structure and Electronic Properties of Ultra Thin dielectric Films on Silicon and Related Structures," in MRS Meeting Boston Massachusetts, 1999.

43.S. Tiwari, F. R. McFeely, D. Buchanan, and E. Cartier, "Tungsten Gates using carbonyl chemistry:  Electrical and processing properties as MOSFETs Gates," in IEEE Devices Meeting (IEDM) San Francisco, California, 1998.

42.D. I. Buchanan, "Reliability and Integration of Ultra-thin gate dielectrics for advanced CMOS," in International Workshop on Formation, Characterization and Reliability of Ultra-thin Silicon Oxides Gotemba, Japan, 1998.

41.L. Xie, K. R. Farmer, and D. Buchanan, "Defect Instability in Ultra-Thin Oxides on Silicon," in Microelectronic Engineering. vol. 35, 1997, pp. 25-28.

40.E. Wu, S. H. Lo, W. W. Abadeer, A. Acovic, D. A. Buchanan, T. Furukawa, D. Brochu, and R. Dufresne, "Determination of Ultra-thin Oxide Voltages and Thickness and the Impact on Reliability Projection," in 35th Annual IEEE International Reliability Physics Symposium Denver CO U.S.A.: IEEE, 1997, pp. 184-189.

39.S.-H. Lo, D. Buchanan, Y. Taur, L.-K. Han, and E. Wu, "Modeling and Characterization of n+ and p+- polysilicon-Gated Ultra Thin Oxides," in VLSI Technology Digest of Technical Papers, 1997, p. 149.

38.K. R. Farmer, C. P. Debauche, C. Franck, W. R. Buchwald, and D. Buchanan, "Relationship between positive charge and breakdown in sub 3.5 nm oxides on silicon," in International reliability of Physics Symposium (IRPS), 1997.

37.E. Cartier, J. C. Tsang, M. V. Fischetti, and D. Buchanan, "Light Emission during Direct and Fowler-Nordhei, Tunneling in Ultra Thin MOS Tunnel Junctions," in Microelectronic Engineering. vol. 35, 1997, pp. 103-106.

36.D. A. Buchanan, J. H. stathis, E. Cartier, and D. J. DiMaria, "On the Relationship Between Stress Induced Leakage Currents and Catastrophic Breakdown in Ultra-thin si02 Based Dielectrics,"  Yorktown Heights, NY: TJ Watson Research Centre, 1997.

35.E. Wu, S. H. Lo, A. Acovic, and D. Buchanan, "Determination of ultra-tin oxide voltages and thickness for dual gate poly FET structures," in 27th IEEE Semiconductor Interface Specialists Conference (SISC96) San Diego USA, 1996.

34.S. H. Lo, D. Buchanan, Y. Taur, and W. K. Wang, "Quantum-mechanical calculation of capacitance and tunneling current of ultra-thin oxides with experimental verification," in 27th IEEE Semiconductor Interface Specialists Conference San Diego, USA, 1996.

33.D. A. Buchanan and S. H. Lo, "Growth, Characterization and the Limits of Ultrathin SiO2-Based Dielectrics for Future CMOS Applications," in The Physics and Chemistry of SiO2 and the  Si-SiO2 Interfaces -  3. vol. 3, H. Z. Massoud, E. H. Poindexter, and C. R. Helms, Eds. Los Angeles: The Electrochemical Society, 1996, pp. 3-14.

32.S. Wind, Y. Taur, Y. J. Mii, D. J. Frank, H.-S. Wong, D. A. Buchanan, S. Wind, S. A. Rishton, J. J. Bucchignano, Y. Lii, and K. A. Jenkins, "Probing the Limits of Silicon-based Nano-electronics," in Symposium on Materials-Fabrication and Patterning at the Nanoscale. vol. 380, F. Cerrina and C. Marrian, Eds. San Francisco, CA U.S.A: Materials Research Society, 1995, pp. 179-185.

31.S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chen, and D. Buchanan, "Volatile and Non-Volatile Memories in Silicon with Nano-crystal Storage," IEDM Technical Digest, 1995, p. 1995.

30.R. H. Stahlbush, E. Cartier, and D. Buchanan, "Anomalous Positive Charge Formation by Atomic Hydrogen Exposure," in Microelectronic Engineering. vol. 28, 1995, p. 15.

29.K. R. Farmer, C. P. Debauche, A. R. Giordano, P. Lundgren, M. O. Andersson, and D. Buchanan, "Weak fluence dependence of charge generation in ultra thin oxides on silicon," in 5th International Conference on the Formation of Semiconductor Interfaces (ICFSI 5) Princeton, NJ USA, 1995.

28.E. Cartier, D. A. Buchanan, J. H. Stathis, and D. J. DiMaria, "Atomic hydrogen-induced  degration of thin Si02 gates oxides," in J. Non-Crystal. Solids. vol. 187, 1995, p. 244.

27.E. Cartier, D. DiMaria, D. Buchanan, J. H. Stathis, W. W. Abadeer, and R. R. Vollersten, "Degradation of thin Si02 gate oxides by atomic hydrogen," in 52nd Annual Device Research Conference Salt Lake City, Utah, 1994, pp. 73-74.

26.D. I. Buchanan, "Electrical Characterziation of thin gate insulators for sub 0.1 um MOSFETs," in American Vacuum Society (AVS) Meeting Rutgers Uviersity, MJ USA, 1994.

25.D. A. Buchanan, A. D. Marwick, D. J. DiMaria, and L. Dori, "Hot-electron induced redistribution and defect generation in metal-oxide-semiconductor capacitors," in 181st Meeting of the Electrochemical-Society. vol. 76, C. R. Helms and B. E. Deal, Eds. Los Angeles, CA, U.S.A.: The Electrocehmical Society, 1994, pp. 481-488.

24.D. DiMaria, D. Buchanan, J. H. Stathis, and R. E. Stahlbush, "Interface states induced by hole trapping in silicon dioxide," in Semiconductor Interface Specialists Conference Ft. Lauderdale, Florida, 1993.

23.D. Buchanan, D. DiMaria, C. Chang, and Y. Taur, "Defect generation in 3.5 nm silicon dioxide films," in Semiconductor Interface Specialsits Conference Ft. Lauderdale, Florida USA, 1993.

22.Y. Taur, S. Cohen, S. Wind, T. Lii, C. Hsu, D. Quinlan, C.-A. Chang, D. Buchanan, P. Agnello, Y. Mii, C. Reeves, A. Acovic, and V. Kesan, "High Transconductance 0.1 mm pMOSFET," in IEDM-92-Extended Abstracts 87-2, 1992, p. 901.

21.A. D. Marwick, D. Buchanan, D. DiMaria, P. Saunders, and L. Dori, "Measurements of Hydrogen Redistribution in hot electron Injection of MOS Capacitors," in Materials Research Society Meeting Boston Mass. USA, 1992.

20.A. D. Marwick, D. Buchanan, D. DiMaria, and L. Dori, "Hot-electron induced redistribtuion in Si02," in Proceedings of Symposium on Amorphous Insulating Thin Films, J. Kanicki, W. L. Warren, R. A. B. Devine, and M. Matsurmura, Eds. Boston, MA: Materials Research Society, 1992.

19.J. P. Gambino, B. Cunningham, and D. Buchanan, "The effect of siliide formation on the electrical properties of gate oxides," in Advanced Metalization and Processing for Semiconductor devices, A. Katz, S. P. Mirarka, Y. I. Nissan, and J. M. E. Harper, Eds. Boton, MASS: Materials Research Society, 1992.

18.D. I. Buchanan, "Measuring Damage in Si02 Films from Electron Cyclotron Resonance and Reactive Ion Etch Plasmas," in SEMATECH - Plasma Etch Damage Workshop Austin Texas, 1992.

17.D. Buchanan and A. D. Marwick, "Hydrogen Cracking Sites in Si02. Produced by Fowler-Nordheim Injection," in Semiconductor Interface Specialists Conference San Diego, California, 1992.

16.D. I. Buchanan and G. Fortuno-Wiltshire, "Radiation Damage in Si02 Films from Electron Cyclotron Resonance, reactive Ion and Inductiviely Coupled Plasmas," in Workshop on Degradation of Thin Oxides During RIE, Microelectronics Centre (MCNC) Research Triangle, North Carolina, 1991.

15.D. Buchanan, A. D. Marwick, D. DiMaria, and L. Dori, "Hot-electron induced hydrogen redistribtuion in Si02, ," in The Physics and Chemistry of Si02 and the Si-Si02 Interface: 2, B. Deal and C. R. Helms, Eds. Washington D.C. U.S.A.: The Electrochemical Society, 1991.

14.R. Srinivasan, D. Buchanan, and C. Nguyen, "Electrical Characterization of PECVD TEOS Based Oxides," in Eighth Symposium on Plasma Proceedings. vol. 90-14, G. S. Mathad and D. W. Hess, Eds. Electrochemical Society, 1990, p. 525.

13.J. L. Freeouf, D. Buchanan, S. L. Wright, T. N. Jackson, and B. Robinson, "The Effects of a Silicon Interlayer at GaAs Surfaces and Oxide Interfaces," in Electronic Materials Conference Santa Barbara, California, 1990.

12.J. L. Freeouf, D. Buchanan, S. L. Wright, T. N. Jackson, J. Batey, B. Robinson, A. Callegari, A. Paccagnella, and J. M. Woodall, "Studies of GaAs-Oxide Interfaces With and Without a Silicon Interlayer," in J. Vac. Sci. and Technol. B. vol. 8, 1990, p. 860.

11.D. Buchanan and G. Fortuno-Wiltshire, "Vacuum-Ultra-Violet Radiation Damage in Electron Cyclotron resonant and reactive Ion Etch Plasmas," in American Vacuum Society Meeting Toronto, Ontario, 1990.

10.J. Kanicki, D. Buchanan, and B. Robinson, "Comparative Study of Silicon Dioxide Films by Various Techniques," in The Electrochemical Society-Extended Abstracts. vol. 87-2, 1989, p. 1531.

9.A. C. Callegari, D. Lacey, D. A. Buchanan, E. Latta, M. Gasser, and A. Paccagnella, "Surface Studies of GaAs treated by Hydrogen and Nitrogen RF Plasma," in 16th International Symposium on Gallium Arsenide and Related Compounds. vol. 106, T. Ikoma and E. Watanabe, Eds. Kqaruizawa, Japan: IOP Publishing Ltd., Bristol, 1989, pp. 399-404.

8.A. Callegari, D. Lacy, D. Buchanan, E. Latta, M. Gasser, and A. Paccagnella, "Surface studies of GaAs treated by hydrogen and nitrogen plasmas," in Inst. Phys. Conf. Ser.,. vol. 106, 1989, p. 399.

7.D. A. Buchanan, M. V. Fischetti, and D. DiMaria, "Coulombic and Neutral Trapping in Si02," in Insulating Films on Semiconductors Garchen, West Germany, 1989.

6.D. Buchanan, J. Stathis, and P. Wagner, "Trapped Positive Charge in Plasma-Enhanced Chemical-Vapor-Depositied Silicon Dioxide," in Semiconductor Interface Specialists Conference Fort Lauderdale, Florida, 1989.

5.D. Buchanan and D. DiMaria, "Interface and Bulk Trap Generation in Metal-Oxide-Semiconductor Capacitors," in Semiconductor Interface Specialists Conference Fort Lauderdale, Florida, 1989.

4.T. V. Herak, T. T. Chau, D. J. Thomson, S. J. Mejia, D. Buchanan, and K. C. Kao, "Low Temperature Deposition of Silicon Dioxde Films Deposited by ECR Microwave Plasmas," in Fourth Annual Canadian Technology Conference Ottawa, Ontario, 1988.

3.T. V. Herak, T. T. Chau, M. Jin, D. J. Thomson, S. J. Mejia, K. C. Kao, and D. Buchanan, "Silicon Oxide Deposited by ECR Microwave Plasmas," in American Physical Society Meeting (Invited) New Orleans, USA, 1988.

2.T. T. Chau, T. V. Herak, D. J. Thomson, S. J. Mejia, D. Buchanan, R. D. McLeod, and K. C. Kao, "Silicon oxide films fabricated by ECR microwave plasmas," in Properties and Applications of Dielectric Materials. vol. 193, 1988, p. 193.

1.D. Buchanan, "Conduction in Silicon-rich Si3N4 Thin Films," in Insulating Films on Semiconductors, J. J. Simonne and J. Buxo, Eds. Toulouse, Freance, 1984, p. 191.


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