Journal Publications

100.T. A. Emadi, and D. A. Buchanan, “A novel 6×6 element MEMS capacitive ultrasonic transducer with multiple moving membranes for high performance imaging applications,” Journal of Sensors and Actuators A: Physical vol. 222, pp. 309-313 (2015).

99.T. A. Emadi, and D. A. Buchanan, “Design and fabrication of a novel MEMS capacitive transducer with Multiple Moving Membrane, M3-CMUT,” IEEE Transactions on Electron Devices, vol. 61, no. 3, pp. 890-896 (2014).

98.T. A. Emadi, and D. A. Buchanan, “Multiple moving membrane CMUT with enlarged membrane displacement and low pull-down voltage,” IEEE Electron Device Letters, vol. 34, no. 12, pp.1578-1580 (2013).

97.T. A. Emadi, and D. A. Buchanan, “Wide range beam steering capability of a 1-D MEMS transducer imager array with directional beam pattern,” Journal of Sensors and Actuators A: Physical vol. 202 (2013).

96.I. Yahyaie, D. A. Buchanan, G. E. Bridges, D. J. Thomson, and D. Oliver, “High-Resolution Imaging of Gigahertz Polarization Response Arising From the Interference of Reflected Surface Acoustic Waves,” IEEE Transactions on UltrasonIcs, FerroElectrics, and Frequency Control, vol. 59, no. 6, p. 1212 (2012).

95.N. Masood, G.A. Ferrier, D.J. Thomson, D.A. Buchanan, Performance of a multi-electrode silicon-based dielectrophoretic cage device using four electrical contacts, Microelectronic Engineering 88, 1795–1797 (2011).

94.S. Rudenja, A. Minko, and D. A. Buchanan, "Low-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements," APPLIED SURFACE SCIENCE, vol. 257, pp. 17-21, Oct 2010.

93.M. Alsehaili, S. Noghanian, A. R. Sebak, and D. A. Buchanan, "Angle and Time of Arrival Statistics of a Three Dimensional Geometrical Scattering Channel Model for Indoor and Outdoor Propagation Environments," Progress in Electromagnetics Research-Pier, vol. 109, pp. 191-209, 2010.

92.M. Alsehaili, S. Noghanian, D. A. Buchanan, and A. Sebak, "Angle of arrival statistics of a three dimensional geometrical scattering channel model for indoor and outdoor propagation environments publication.," IEEE Ant. Wireless Prop. Lett., vol. 9, pp. 946-949, accepted for publication 2010.

91.P. Patel, M. Nadesalingam, R. M. Wallace, and D. A. Buchanan, "Physical and optoelectronic characterization of reactively sputtered molybdenum-silicon-nitride alloy metal gate electrodes," J. Appl. Phys., vol. 105, p. 024517, 2009.

90.D. Felnhofer, E. P. Gusev, and D. A. Buchanan, "Photocurrent measurements for oxide charge characterization of high-κ dielectric metal-oxide-semiconductor capacitors," J. Appl. Physics, vol. 103   p. 054101, 2008.

89.D. A. Buchanan and D. Felnhofer, "On the characterization of electronically active defects in high-k gate dielectrics," in Defects in High-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices. vol. 220, E. Gusev, Ed., 2006, pp. 41-59.

88.D. Felnhofer, E. P. Gusev, P. Jamison, and D. A. Buchanan, "Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemission," Microelectronic Engineering, vol. 80, pp. 58-61, 2005.

87.M. Dragosavac, D. J. Paul, M. Pepper, A. B. Fowler, and D. A. Buchanan, "Electron effective mass in ultrathin oxide silicon MOSFET inversion layers," Semiconductor Science and Technology, vol. 20, pp. 664-667, Aug 2005.

86.M. Dragosavac, D. J. Paul, M. Pepper, A. B. Fowler, and D. A. Buchanan, "Electron effective mass enhancement in ultrathin gate-oxide Si-MOSFETs," in Physics of Semiconductors, Pts A and B. vol. 772, J. Menendez and C. G. VanDeWalle, Eds., 2005, pp. 495-496.

85.D. A. Buchanan, "Beyond Microelectronics: Materials and Technology for Nano-scale CMOS Devices," Phys. Stat. Sol. (c), vol. 1, pp. S155-S162, 2004.

84.D. A. Buchanan, "Electronically Active Defects in Ultra-thin Oxynitride Gate Dielectrics," in Seventh International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, R. E. Sah, K. B. Sundaram, M. J. Deen, D. Landheer, W. D. Brown, and D. Misra, Eds. Paris, France: The Electrochemical Society, 2003, pp. 28-340.

83.S. Guha, E. P. Gusev, M. Copel, L.-Å. Ragnarsson, and D. A. Buchanan, "Compatibility challenges  for high-k materials integration into CMOS technology," MRS Bulletin, vol. 27, pp. 226-229, 2002.

82.M. A. Gribelyuk, A. Callegari, E. P. Gusev, M. Copel, and D. A. Buchanan, "Interface reactions in ZrO2 based gate dielectric stacks," J. Appl. Phys., vol. 93, p. 1232, 2002.

81.D. A. Buchanan, "Metal Gates for Advanced CMOS," in Nano and Giga Challenges in Microelectronics Moscow, 2002.

80.T. Z. Ma, S. A. Campbell, R. Smith, N. Hoilien, B. Y. He, W. L. Gladfelter, C. Hobbs, D. Buchanan, C. Taylor, M. Gribelyuk, M. Tiner, M. Coppel, and J. J. Lee, "Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates," IEEE transactions on Electron Devices, vol. 48, pp. 2348-2356, Oct 2001.

79.E. P. Gusev, D. A. Buchanan, E. Cartier, A. Kumar, D. DiMaria, S. Guha, A. Callegari, S. Zafar, P. C. Jamison, D. Neumayer, M. Copel, M. A. Gribelyuk, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski, K. Chan, N. Bojarczuk, L. Ragnarsson, P. Ronshein, K. Rim, R. J. Fleming, A. Mocuta, and A. Ajmera, "Ultrathin high-K gate stacks for advanced CMOS devices," IEDM Technical Digest, p. 451, 2001.

78.D. A. Buchanan, E. P. Gusev, E. Cartier, H. Okorn-Schmidt, K. Rim, M. Gribelyuk, A. Mocuta, A. Ajmera, M. Copel, S. Guha, N. Bojarczuk, A. Callegari, C. D'Emic, P. Kozlowski, K. Chan, R. F. Fleming, P. Jamison, J. Brown, and R. Arndt, "The application of high-K dielectrics for high performance CMOS," in MRS Workshop on Alternatives to SiO2 as Gate Dielectrics for Future Si_Based Microelectronics. vol. 567, J. Morais and I. Baumvol, Eds. Port Alegre, Brasil: MRS, 2001, p. 2.

77.R. C. Smith, N. Hoilien, C. J. Taylor, T. Z. Ma, S. A. Campbell, J. T. Roberts, M. Copel, D. A. Buchanan, M. Gribelyuk, and W. L. Gladfelter, "Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(IV) nitrate," Journal of the Electrochemical Society, vol. 147, pp. 3472-3476, Sep 2000.

76.H. F. Okorn-Schmidt, E. P. Gusev, E. Cartier, D. A. Buchanan, D. L. Rath, A. Callegari, S. Guha, N. A. Bojarczuk, M. Gribelyuk, and M. Copel, "Characterization of bulk and interface properties of dielectric layers and stacks," in Physics and Chemistry of Sio2 and the Si-Sio2 Interface - 4. vol. 2000, H. Z. Massoud, I. J. R. Baumvol, M. Hirose, and E. H. Poindexter, Eds., 2000, pp. 505-511.

75.D. A. Buchanan, E. P. Gusev, E. Cartier, H. Okorn-Schmidt, K. Rim, M. A. Gribelyuk, A. Mocuta, A. Ajmera, M. Copel, S. Guha, N. Bojarczuk, A. Callegari, C. D'Emic, P. Kozlowski, K. Chan, R. J. Fleming, P. C. Jamison, J. Brown, R. Arndt, and I. Ieee, 80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications, 2000.

74.S.-H. Lo, D. A. Buchanan, and Y. Taur, "Modeling and characterization of quantization, plysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides," IBM J. Res. Develop., vol. 43, p. 327, 1999.

73.D. A. Buchanan, "Scaling the gate dielectric: Materials, integration and reliability," IBM J. Res. and Develop., vol. 43, p. 245, 1999.

72.D. A. Buchanan, F. R. McFeely, and J. J. Yurkas, "Fabrication of mid-gap metal gates compatible with ultra-thin dielectrics," Appl. Phys. Lett., vol. 73, pp. 1676-1678, 1998.

71.L. Xie, K. R. Farmer, and D. A. Buchanan, "Defect Instability in Ultra-Thin Oxides on Silicon," Microelectronic Engineering, vol. 35, pp. 25-28, 1997.

70.E. Wu, S. H. Lo, W. W. Abadeer, A. Acovic, D. A. Buchanan, T. Furukawa, D. Brochu, and R. Dufresne, "Determination of Ultra-thin Oxide Voltages and Thickness and the Impact on Reliability Projection," in 35th Annual IEEE International Reliability Physics Symposium Denver CO U.S.A.: IEEE, 1997, pp. 184-189.

69.E. Wu, S. H. Lo, W. Abadeer, A. Acovic, D. Buchanan, T. Furukawa, D. Brochu, R. Dufresne, and Ieee, Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection, 1997.

68.Y. Taur, D. A. Buchanan, W. Chen, D. J. Frank, S.-H. Lo, G. A. Sai-Halasz, R. G. Siswanathan, H.-J. C. Wann, S. J. Wind, and H.-S. Wong, "CMOS Scaling into the Nanometer Regime (invited paper)," Proceedings of the IEEE, vol. 85, p. 486, 1997.

67.S. H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, "Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's," IEEE Electron Device Letters, vol. 18, pp. 209-211, May 1997.

66.S. H. Lo, D. A. Buchanan, Y. Taur, L. K. Han, E. Wu, and P. Japan Soc Appl, Modeling and characterization of n(+)- and p(+)-polysilicon-gated ultra thin oxides (21-26 angstrom), 1997.

65.D. A. Buchanan, J. H. Stathis, E. Cartier, and D. J. DiMaria, "On the Relationship between Stress Induced Leakage Currents and Catastrophic Breakdown in Ultra-thin SiO2 Based Dielectrics," Microelectronic Engineering, vol. 36, pp. 329-332, 1997.

64.F. Rana, S. Tiwari, and D. A. Buchanan, "Self-consisten Modeling of Accumulation Layers and Tunneling Currents Through Very Thin Oxides," Appl. Phys. Lett., vol. 69, pp. 1104-1106, 1996.

63.K. R. Farmer, C. P. Debauche, A. R. Giordano, P. Lundgren, M. O. Andersson, and D. A. Buchanan, "Weak Fluence Dependence of Charge Generation in Ultra-thin Oxides on Silicon," Appl. Surf. Sci., vol. 104, pp. 369-372, 1996.

62.S. J. Wind, Y. Taur, Y. Mii, D. J. Frank, H. S. Wong, D. A. Buchanan, S. A. Rishton, J. J. Bucchignano, Y. Lii, and K. A. Jenkins, "Probing the limits of silicon-based nanoelectronics," in Materials-Fabrication and Patterning at the Nanoscale. vol. 380, F. Cerrina and C. Marrian, Eds., 1995, pp. 179-185.

61.S. Wind, Y. Taur, Y. J. Mii, D. J. Frank, H.-S. Wong, D. A. Buchanan, S. Wind, S. A. Rishton, J. J. Bucchignano, Y. Lii, and K. A. Jenkins, "Probing the Limits of Silicon-based Nano-electronics," in Symposium on Materials-Fabrication and Patterning at the Nanoscale. vol. 380, F. Cerrina and C. Marrian, Eds. San Francisco, CA U.S.A: Materials Research Society, 1995, pp. 179-185.

60.S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, D. Buchanan, and Ieee, Volatile and non-volatile memories in silicon with nano-crystal storage, 1995.

59.Y. Taur, Y. J. Mii, H. S. Wong, D. A. Buchanan, S. J. Wind, S. A. Rishton, G. A. Sai-Halasz, and E. J. Nowak, "0.1 mm CMOS and Beyond," IBM J. Res. and Develop., vol. 39, p. 245, 1995.

58.Y. Taur, Y. J. Mii, D. J. Frank, H.-S. Wong, D. A. Buchanan, S. Wind, S. A. Rishton, G. A. Sai-Halasz, and E. J. Nowak, "CMOS Scaing into the 21st Century - 0.1 mm and Beyond," IBM J. of Res. & Devl., vol. 39, pp. 245-260, 1995.

57.Y. Taur, Y. J. Mii, D. J. Frank, H. S. Wong, D. A. Buchanan, S. J. Wind, S. A. Rishton, G. A. Saihalasz, and E. J. Nowak, "CMOS SCALING INTO THE 21ST-CENTURY - 0.1-MU-M AND BEYOND," Ibm Journal of Research and Development, vol. 39, pp. 245-260, Jan-Mar 1995.

56.R. H. Stahlbush, E. Cartier, and D. Buchanan, "Anomalous Positive Charge Formation by Atomic Hydrogen Exposure," Microelectronic Engineering, vol. 28, p. 15, 1995.

55.D. Landheer, Y. Tao, D. X. Xu, G. I. Sproule, and D. A. Buchanan, "DEFECTS GENERATED BY FOWLER-NORDHEIM INJECTION IN SILICON DIOXIDE FILMS PRODUCED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION WITH NITROUS-OXIDE AND SILANE," Journal of Applied Physics, vol. 78, pp. 1818-1823, Aug 1995.

54.D. Landheer, Y. Tao, D. X. Xu, G. I. Sproule, and D. A. Buchanan, "Defects generated by Fowler-Nordheim injection in silicon dioxide films produced by plasma-enhanced chemical-vapour deposition with nitrous oxide and silane," J. Appl. Phys., vol. 78, p. 1818, 1995.

53.D. J. DiMaria, E. Cartier, and D. A. Buchanan, "Anode Hole Injection and Trapping Silicon Dioxide," J. Appl. Phys., vol. 80, pp. 304-317, 1995.

52.D. J. DiMaria, D. A. Buchanan, J. H. Stathis, and R. H. Stahlbush, "Interface states induced by the presence of trapped holes near the silicon/silicon dioxide interface," J. Appl. Phys., vol. 77, p. 2032, 1995.

51.D. J. Dimaria, D. A. Buchanan, J. H. Stathis, and R. E. Stahlbush, "INTERFACE STATES INDUCED BY THE PRESENCE OF TRAPPED HOLES NEAR THE SILICON-SILICON DIOXIDE INTERFACE," Journal of Applied Physics, vol. 77, pp. 2032-2040, Mar 1995.

50.E. Cartier, D. A. Buchanan, J. H. Stathis, and D. J. DiMaria, "Atomic Hydrogen-Induced Degradation of Thin SiO2 Gate Oxides," J. Non-Cryst. Solids, vol. 187, pp. 244-247, 1995.

49.E. Cartier, D. J. DiMaria, D. A. Buchanan, J. H. Stathis, W. W. Abadeer, and R. R. Vollersten, "Degradation of thin silicon dioxide gate oxides by atomic hydrogen," IEEE Trans. on Elect. Dev., vol. ED-99, p. 1234, 1994.

48.E. Cartier, D. A. Buchanan, and G. J. Dunn, "Atomic Hydrogen-Induced Degradation of Re-Oxidized Nitrided Silicon Dioxide on Silicon," Appl Phys. Lett., vol. 64, pp. 901-903, 1994.

47.A. C. Callegari, D. A. Buchanan, H. Hovel, E. Simonyi, A. D. Marwick, and N. E. Lustig, "Thermal Stability and Electrical Properties of Hydrogentaed Amorphoous Carbon Films," Appl. Phys. Lett., vol. 65, pp. 3200-3202, 1994.

46.A. Callegari, D. A. Buchanan, H. Hovel, E. Simonyi, A. Marwick, and N. E. Lustig, "THERMAL-STABILITY AND ELECTRICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-CARBON FILM," APPLIED PHYSICS LETTERS, vol. 65, pp. 3200-3202, Dec 1994.

45.D. A. Buchanan, A. D. Marwick, D. J. Dimaria, and L. Dori, "HOT-ELECTRON-INDUCED HYDROGEN REDISTRIBUTION AND DEFECT GENERATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS," Journal of Applied Physics, vol. 76, pp. 3595-3608, Sep 1994.

44.D. A. Buchanan, A. D. Marwick, D. J. DiMaria, and L. Dori, "Hot-electron induced redistribution and defect generation in metal-oxide-semiconductor capacitors," J. Appl. Phys., vol. 76, pp. 3595-3608, 1994.

43.D. A. Buchanan, D. J. DiMaria, C.-A. Chang, and Y. Taur, "Defect generation in 3.5 nm silicon dioxide films," Appl. Phys. Lett., vol. 65, pp. 1820-1822, 1994.

42.D. A. Buchanan, "On the Generation of Interface States from Electron-Hole Recombination in Metal-Oxide Semiconductor Capacitors," Appl. Phys. Lett., vol. 65, pp. 1257-1259, 1994.

41.Y. Taur, S. A. Cohen, S. Wind, T. Lii, C. Hsu, D. L. Quinlan, C. A. Chang, D. A. Buchanan, P. Agnello, Y. Mii, C. Reeves, A. Acovic, and V. J. Kesan, "Experimental 0.1 mm p-Channel MOSFET with p+-Polysilicon Gate on 35 Angstrom Gate Oxide," IEEE Electr. Dev. Lett., vol. 14, p. 304, 1993.

40.Y. Taur, S. Cohen, S. Wind, T. Lii, C. Hsu, D. Quinlan, C. A. Chang, D. Buchanan, P. Agnello, Y. J. Mii, C. Reeves, A. Acovic, and V. Kesan, "EXPERIMENTAL 0.1-MU-M P-CHANNEL MOSFET WITH P+-POLYSILICON GATE ON 35-ANGSTROM GATE OXIDE," IEEE Electron Device Letters, vol. 14, pp. 304-306, Jun 1993.

39.J. H. Stathis, D. A. Buchanan, D. L. Quinlan, A. H. Parsons, and D. E. Kotecki, "Interface Defects of Ultra-Thin Rapid-Thermal Oxide on Silicon " Appl. Phys. Lett., vol. 62, pp. 2682-2684, 1993.

38.E. Cartier, J. H. Stathis, and D. A. Buchanan, "PASSIVATION AND DEPASSIVATION OF SILICON DANGLING BONDS AT THE SI/SIO2 INTERFACE BY ATOMIC-HYDROGEN," APPLIED PHYSICS LETTERS, vol. 63, pp. 1510-1512, Sep 1993.

37.E. Cartier, J. H. Stathis, and D. A. Buchanan, "Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen," Appl. Phys. Lett., vol. 63, p. 1510, 1993.

36.D. A. Buchanan, A. D. Marwick, D. J. Dimaria, and L. Dori, HOT-ELECTRON-INDUCED HYDROGEN REDISTRIBUTION IN SIO2, 1993.

35.D. A. Buchanan, "Polarity Dependence of Hot Electron Induced Trap Creation in Metal-Oxide-Semiconductor Capacitors," Appl. Phys. Lett., vol. 60, pp. 216-218, 1992.

34.G. W. Hammond, R. Tate, D. Buchanan, R. Malazdrewicz, D. Chochinov, L. Sekla, and K. Elmslie, "SEROPREVALENCE AND DEMOGRAPHIC CHARACTERISTICS OF INJECTION-DRUG USERS AMONG INDIVIDUALS AT RISK FOR HIV-INFECTION IN WINNIPEG, MANITOBA, CANADA," Clinical and Investigative Medicine-Medecine Clinique Et Experimentale, vol. 14, pp. 437-443, Oct 1991.

33.A. Callegari, D. K. Sadana, D. A. Buchanan, A. Paccagnella, E. D. Marshall, M. A. Tischler, and M. Norcott, "PROPERTIES OF SIO2/SI/GAAS STRUCTURES FORMED BY SOLID-PHASE EPITAXY OF AMORPHOUS SI ON GAAS," APPLIED PHYSICS LETTERS, vol. 58, pp. 2540-2542, Jun 1991.

32.A. Callegari, D. K. Sadana, D. Buchanan, A. Paccagnella, E. D. Marshall, M. A. Tischler, and M. Norcott, "Properties of Si02/Si/GaAs Structures Formed by Solid Phase Epitaxy of Amorphous Si on GaAs," Appl. Phys. Lett., vol. 58, p. 2540, 1991.

31.D. A. Buchanan and G. Fortunowiltshire, "VACUUM ULTRAVIOLET-RADIATION DAMAGE IN ELECTRON-CYCLOTRON RESONANCE AND REACTIVE ION ETCH PLASMAS," Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 9, pp. 804-809, May-Jun 1991.

30.D. A. Buchanan, M. V. Fischetti, and D. J. Dimaria, "COULOMBIC AND NEUTRAL TRAPPING CENTERS IN SILICON DIOXIDE," Physical Review B, vol. 43, pp. 1471-1486, Jan 1991.

29.D. A. Buchanan, M. V. Fischetti, and D. J. DiMaria, "Coulombic and neutral trapping centres in silicon dioxide," Phy. Rev. B, vol. 43, pp. 1471-1486, 1991.

28.D. Buchanan and G. Fortuno-Wiltshire, "Vacuum-Ultra-Violet Radiation Damage in Electron Cyclotron resonant and Reactive Ion Etch Plasmas," J. Vac. Sci. & Technol. A, vol. 9, pp. 804-809, 1991.

27.J. L. Freeouf, D. A. Buchanan, S. L. Wright, T. N. Jackson, J. Batey, B. Robinson, A. Callegari, A. Paccagnella, and J. M. Woodall, "STUDIES OF GAAS OXIDE INTERFACES WITH AND WITHOUT SI INTERLAYER," Journal of Vacuum Science & Technology B, vol. 8, pp. 860-866, Jul-Aug 1990.

26.J. L. Freeouf, D. Buchanan, S. L. Wright, T. N. Jackson, and B. Robinson, "Accumulation Capacitance for GaAs - Si02 Interfaces with Silicon Interlayers," Appl. Phys. Lett., vol. 57, p. 1919, 1990.

25.J. L. Freeouf, D. Buchanan, S. L. Wright, T. N. Jackson, J. Batey, B. Robinson, A. Callegari, A. Paccagnella, and J. M. Woodall, "Studies of GaAs-Oxide Interfaces With and Without a Silicon Interlayer," J. Vac. Sci. and Technol. B., vol. 8, p. 860, 1990.

24.T. T. Chau, T. V. Herak, D. J. Thomson, S. R. Mejia, D. A. Buchanan, R. D. McLeod, and K. C. Kao, "SILICON DIOXIDE FILMS FABRICATED BY ELECTRON-CYCLOTRON RESONANT MICROWAVE PLASMAS," Ieee Transactions on Electrical Insulation, vol. 25, pp. 593-598, Jun 1990.

23.T. T. Chau, T. V. Herak, D. J. Thomson, S. J. Mejia, D. Buchanan, R. D. McLeod, and K. C. Kao, "Silicon dioxide films fabricated by electron cyclotron resonant microwave plasmas," IEEE Trans. on Elect. Insul., vol. 25, p. 593, 1990.

22.A. Callegari, D. Lacey, D. A. Buchanan, E. Latta, M. Gasser, and Paccagnella, "SURFACE STUDIES OF GAAS TREATED BY HYDROGEN AND NITROGEN RF PLASMA," in Gallium Arsenide and Related Compounds 1989. vol. 106, T. Ikoma and H. Watanabe, Eds., 1990, pp. 399-404.

21.A. Callegari, D. Lacey, D. A. Buchanan, E. Latta, M. Gasser, and Paccagnella, "SURFACE STUDIES OF GAAS TREATED BY HYDROGEN AND NITROGEN RF PLASMA," Institute of Physics Conference Series, pp. 399-404, 1990.

20.D. A. Buchanan, J. H. Stathis, and P. R. Wagner, "TRAPPED POSITIVE CHARGE IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON DIOXIDE FILMS," APPLIED PHYSICS LETTERS, vol. 56, pp. 1037-1039, Mar 1990.

19.D. A. Buchanan, J. H. Stathis, and P. R. Wagner, "Trapped Positive Charge in Plasma-Enhanced Chemical-Vapor-Depositied Silicon Dioxide," Appl. Phys. Lett., vol. 56, pp. 1037-1039, 1990.

18.D. A. Buchanan and D. J. DiMaria, "Interface and Bulk Trap Generation in Metal-Oxide-Semiconductor Capacitors," J. Appl. Phys., vol. 67, pp. 7439-7452, 1990.

17.T. V. Herak, T. T. Chau, D. J. Thomson, S. R. Mejia, D. A. Buchanan, and K. C. Kao, "LOW-TEMPERATURE DEPOSITION OF SILICON DIOXIDE FILMS FROM ELECTRON-CYCLOTRON RESONANT MICROWAVE PLASMAS," Journal of Applied Physics, vol. 65, pp. 2457-2463, Mar 1989.

16.T. V. Herak, T. T. Chau, D. J. Thomson, D. A. Buchanan, and K. C. Kao, "Low-temperature Deposition of Silicon Dioxide Films from Electron Cyclotron Resonant Microwave Plasmas," J. Appl. Phys., vol. 65, pp. 2457-2463, 1989.

15.A. C. Callegari, D. Lacey, D. A. Buchanan, E. Latta, M. Gasser, and A. Paccagnella, "Surface Studies of GaAs treated by Hydrogen and Nitrogen RF Plasma," in 16th International Symposium on Gallium Arsenide and Related Compounds. vol. 106, T. Ikoma and E. Watanabe, Eds. Kqaruizawa, Japan: IOP Publishing Ltd., Bristol, 1989, pp. 399-404.

14.A. C. Callegari, P. D. Hoh, D. A. Buchanan, and D. Lacey, "Unpinned Galium Oxide GaAs Interface by Hydrogen and Nitrogen Plasma Treatment," Appl Phys. Lett., vol. 54, pp. 332-334, 1989.

13.A. Callegari, P. D. Hoh, D. A. Buchanan, and D. Lacey, "UNPINNED GALLIUM OXIDE GAAS INTERFACE BY HYDROGEN AND NITROGEN SURFACE PLASMA TREATMENT," APPLIED PHYSICS LETTERS, vol. 54, pp. 332-334, Jan 1989.

12.A. Callegari, P. D. Hoh, D. Buchanan, and D. Lacy, "Unpinned Ga Oxide/GaAs Interface by H2 and N2 Surface Plasma Treatment," Appl. Phys. Lett., vol. 54, p. 332, 1989.

11.D. A. Buchanan, M. V. Fischetti, and D. J. Dimaria, "COULOMBIC AND NEUTRAL ELECTRON TRAPPING CENTERS IN SIO2," APPLIED SURFACE SCIENCE, vol. 39, pp. 420-428, Oct 1989.

10.D. A. Buchanan, M. V. Fischetti, and D. J. DiMaria, "Coulombic and Neutral Trapping Centers in Si02," Appl. Surface Science, vol. 39, pp. 420-428, 1989.

9.G. W. Hammond, D. Buchanan, R. Malazdrewicz, B. Conway, R. Tate, L. Sekla, M. Fast, and A. R. Ronald, "SEROPREVALENCE AND DEMOGRAPHIC INFORMATION OF PATIENTS AT RISK FOR HUMAN IMMUNODEFICIENCY VIRUS (HIV) INFECTION IN MANITOBA, CANADA," Journal of Acquired Immune Deficiency Syndromes and Human Retrovirology, vol. 1, pp. 138-142, 1988.

8.D. A. Buchanan, J. Batey, and E. Tierney, "THIN-FILM TRANSISTORS INCORPORATING A THIN, HIGH-QUALITY PECVD SIO2 GATE DIELECTRIC," IEEE Electron Device Letters, vol. 9, pp. 576-578, Nov 1988.

7.D. A. Buchanan, J. Batey, and E. Tierney, "Thin-Film Transistors Incorporating a Thin, High Quality PECVD SiO2 Dielectric," IEEE Electron Dev. Lett., vol. 9, pp. 576-578, 1988.

6.D. Buchanan, J. Batey, and E. Tierney, "Thin-Film Transistors Incorporating a Thin, High Quality PECVD Si02 Dielectric," Electron Devices, IEEE Transactions, vol. EDL-9, p. 577, 1988.

5.J. Kanicki, D. A. Buchanan, and B. Robinson, "Comparitive Study of Silicon Dioxide Films Deposited by Various Techniques," Journal of the Electromchemical Society, vol. 134, p. C481, 1987.

4.D. A. Buchanan, R. A. Abram, and M. J. Morant, "Charge trapping in silicon-rich Si3N4 thin films," Solid State Electronics, vol. 30, pp. 1295-1301, 1987.

3.D. A. Buchanan and P. G. Gulak, "PHOTOCOUNTING STATISTICS ASSOCIATED WITH TEMPERATURE-FLUCTUATIONS IN SEMICONDUCTOR-LASERS," Applied Optics, vol. 22, pp. 149-151, 1983.

2.D. Buchanan and P. G. Gulak, "Photocounting Statistics Associated with Temperature Fluctuations in Semiconductor Lasers," J. Appl. Optics, vol. 22, p. 149, 1983.

1.D. A. Buchanan and H. C. Card, "On the Dark Currents in Germanium Schottky Barrier Photodetectors," IEEE Trans. on Electron Dev., vol. 29, pp. 154-157, 1982.


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