Patents

Pending

  1. 2.  T. A. Emadi, and D. A. Buchanan, Capacitive micromachined ultrasonic transducer with multiple deflectable membranes, U.S.A. Provisional Patent, SN61/772,651, March (2013).

1.    A. Minko and D. A. Buchanan, "Direct Oxidation of Hafnium Thin Films in Water for Hafnium Dioxide Thin Film Production", Filed in Canadian Patent Office (PCT/CA2011/050729), November 24, (2011).

Issued

31.N. A. Bojarczuk, D. A. Buchanan, S. Guha, V. Narayanan, and L.-A. Ragnarsson, "Semiconductor structure including mixed rare earth oxide formed on silicon ",Issued  January 10, 2010, U.S.A.:7,648,864

30.N. A. Bojarczuk, D. A. Buchanan, S. Guha, V. Narayanan, and L.-A. Ragnarsson, "Semiconductor structure including mixed rare earth oxide formed on silicon ",Issued  October 7, 2008, U.S.A.:7,432,550

29.R. S. Amos, D. A. Buchanan, C. J. Cabral, E. P. Gousev, V. Ku, and A. Steegan, "Process options of forming silicided metal gates for advanced CMOS devices ",Issued  February 5, 2008, U.S.A.:7,326,610

28.D. A. Buchanan and D. A. Neumayer, "Precursor Source Mixtures,"Issued  January 10, 2006, U.S.A.:6,984,591

27.R. S. Amos, D. A. Buchanan, C. J. Cabral, E. P. Gousev, V. Ku, and A. Steegan, "Process options of forming silicided metal gates for advanced CMOS devices ",Issued  April 18, 2006, U.S.A.:7,029,966

26.S. Guha, N. Bojarczuk, L.-A. Ragnarsson, D. A. Buchanan, and V. Narayanan, "Method of Forming Lattice-Matched Structure on Silicon and Structure Formed Thereby,"Issued  February 8, 2005, U.S.A.:6,852,575

25.E. P. Gousev, H. Okorn-Schmidt, A. W. Ballentine, D. A. Buchanan, E. A. Cartier, and D. D. Coolbaugh, "High-k Dielectric Insulators for FEOL Capacitors,"Issued  October 25, 2005, U.S.A:6,958,506

24.D. A. Buchanan, E. P. Gousev, C. J. Heenan, W. J. Hodge, S. M. Shank, and P. R. Varekamp, "Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer ",Issued  May 3, 2005 U.S.A.:6,887,797

23.A. W. Ballentine, D. A. Buchanan, E. A. Cartier, D. D. Coolbaugh, E. Gousev, and H. Okorn-Schmidt, "High Dielectric Insulators for FEOL Capacitors,"Issued  October 25, 2005, U.S.A.:6,958,506

22.P. M. Solomon, E. Cartier, K. Guarini, H. Shang, F. R. McFeely, J. J. Yurkas, and D. A. Buchanan, "Process for Passivating the Semiconductor-Dielectric Interface of a MOS Device Formed Thereby,"Issued  October 12, 2004, U.S.A:6,803,266

21.D. A. Buchanan, M. Copel, and P. Varekamp, "Oxynitride gate dielectric and method of forming,"Issued  June 29, 2004, U.S.A.:6,756,646

20.P. M. Solomon, E. Cartier, K. Guarini, H. Shang, F. R. McFeely, J. J. Yurkas, and D. A. Buchanan, "Process for Passivating the Semiconductor-Dielectric Interface of a MOS Device Formed Thereby,"Issued  October 12, 2004,

19.P. M. Solomon, D. A. Buchanan, E. A. Cartier, K. Guarini, F. R. McFeely, H. Shang, and J. J. Yurkas, "MOS device having a passivated semiconductor-dielectric interface,"Issued  August 5, 2003, U.S.A.:6,603,181

18.D. A. Buchanan, M. Copel, F. R. McFeely, P. Varekamp, M. M. Banaszak-Hall, and K. E. Litz, "Nitrogen-rich barrier layer and structures formed,"Issued  May 20, 2003, U.S.A.:6,566,281

17.D. A. Buchanan, A. C. Callegari, M. A. Gribelyuk, P. Jamison, and D. A. Neumayer, "High Mobility FETs using Al203 as a Gate Oxide,"Issued  January 28, 2003, U.S.A.:6,511,876

16.A. W. Ballentine, D. A. Buchanan, E. A. Cartier, D. D. Coolbaugh, E. P. Gousev, and H. Okorn-Schmidt, "High-k Dielectric Insulators for FEOL Capacitors,"Issued  January 28, 2003, U.S.A:6,511,873

15.A. W. Ballentine, D. A. Buchanan, E. A. Cartier, D. D. Coolbaugh, E. Gousev, and H. Okorn-Schmidt, "High-k Dielectric Insulators for FEOL Capacitors,"Issued  December 23, 2003, U.S.A.:6,667,207

14.A. W. Ballentine, D. Buchanan, E. A. Cartier, D. D. Coolbaugh, E. Gousev, and H. Okorn-Schmidt, "High Dielectric Insulators for FEOL Capacitors,"Issued  December 23, 2003, U.S.A.:6,667,207

13.D. A. Buchanan, E. P. Gusev, C. J. Heenan, W. J. Hodge, S. M. Shank, and P. R. Varekamp, "Apparatus and Method for Forming an Oxynitride Insulating Layer on a Semiconductor Wafer,"Issued  February 12, 2002, U.S.A.:6,346,487

12.D. A. Buchanan, E. Gousev, C. J. Heenan, W. J. Hodge, S. M. Shank, and P. R. Varekamp, "Apparatus and Method for Forming an Oxynitride Insulating Layer on a Semiconductor Wafer,"Issued  February 12, 2002, U.S.A.:6,346,487

11.D. A. Buchanan, E. Gousev, C. J. Heenan, W. J. Hodge, S. M. Shank, and P. Varekamp, "Apparatus and Method for Forming an Oxynitride Insulating Layer on a Semiconductor Wafer,"Issued  August 20, 2002, U.S.A.:6,436,196

10.A. W. Ballentine, D. A. Buchanan, E. Cartier, K. Chan, M. Copel, C. D'Emic, E. Gousev, F. R. McFeely, J. Newbury, H. Okorn-Schmidt, P. Varekamp, and T. Zabel, "Interfacial oxidation process for high-k gate dielectric process integration,"Issued  September 3, 2002, U.S.A.:6,444,592

9.F. R. McFeely, H. Kim, C. Cabral Jr., S. Guha, J. J. Yurkas, V. Narayanan, D. Buchanan, A. Callegari, R. Amos, and K. Rodbell, "High Temperature Processing compatible Metal Gate Electrode for pFETs and Method for Fabrication,"Issued

8.D. A. Buchanan, M. Copel, and P. R. Varekamp, "Method of Forming Oxynitride Gate Dielectric,"Issued  June 12, 2001, U.S.A:6,245,616

7.N. A. Bojarczuk, D. A. Buchanan, S. Guha, L.-A. Ragnarsson, and V. Narayanan, "Method of Forming Lattice-Matched Structure on Silicon and Structure Formed Thereby,"Issued  February 8, 2005, U.S.A.:6,852,575

6.D. A. Buchanan, F. R. McFeely, and J. J. Yurkas, "Fabrication of mid-gap metal gates compatible with ultra-thin dielectrics,"Issued U.S.A:6,091,122

5.D. A. Buchanan, F. R. McFeely, and J. J. Yurkas, "Fabrication of Mid-Gap Metal Gates Compatible with Ultrathin Dielectrics,"Issued  July 18, 2000, U.S.A.:6,091,122

4.D. A. Buchanan, F. R. McFeely, and J. J. Yurkas, "Method of Fabricating Mid-Gap Metal Gates Compatible with Ultra-thin Dielectrics,"Issued  August 4, 1998 U.S.A.:5,789,312

3.F. D. Bailey, D. A. Buchanan, A. Callegari, H. M. Clearfield, F. E. Doany, D. G. Flagello, H. Hovel, D. C. Latulipe Jr., N. E. Lustig, A. T. S. Pomerene, S. S. Purushothaman, C. M. Scherpereel, D. E. Seeger, and J. M. Shaw, "Diamond-like Carbon Films from a Hydrocarbon Helium Plasma,"Issued  October 29, 1996, U.S.A:5,569,501

2.F. D. Bailey, D. A. Buchanan, A. Callegari, H. M. Clearfield, F. E. Doany, D. G. Flagello, H. Hovel, D. C. Latulipe Jr., N. Lustig, A. T. S. Pomerene, S. S. Purushothaman, C. M. Scherpereel, D. E. Seeger, and J. M. Shaw, "Diamond-like Carbon Films from a Hydrocarbon Helium Plasma,"Issued  November 28, 1995, U.S.A:5,470,661

1.D. A. Buchanan, A. Callegari, P. D. Hoh, and D. Lacey, "Method for Passivating a Compound Semiconductor Surface and Devices Having an improved Semiconductor-insulator interface,"Issued  August 22, 1989, U.S.A:4,859,253


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