High Efficiency, high power density, high reliability and fast dynamic response are metrics of designing power electronics converters. And trade-offs are depended on applications. We provide an optimal solution to our industrial collaborators and customers based on their requirement and problem.
A switching characterization (SC) test of power semiconductor devices (PSDs) gives us significant insight into the dynamic switching behavior of the device under various operating conditions. A double pulse test (DPT) is a widely used method for evaluating switching performance parameters of a PSD such as its switching losses, switching speed (di/dt, dv/dt), turn-on and turn-off times etc. The scientific information obtained from analysis of DPT results of a PSD helps in predicting its thermo-electric performance in a target power electronic converter. With conventional DPT setups, it is a time-consuming and error-prone process to manually conduct these tests under several permutations of test parameters and thereafter analyze the experimental data manually. RIGA Lab is developing an automated SC test system, which can run tests one after another, once the desired test parameters are entered in a graphic user interface. The test-control system also enables recording and systematic processing of the experimental switching data to deliver usable characterization results. The automatic, compact and modular design allows the proposed SC test platform to stand out from the conventional DPT setups.
Suggested Reading - A. Ghosh, C. Ho, J. Prendergast, and Y. Xu, “Conceptual Design and Demonstration of an Automatic System for Extracting Switching Loss and Creating Data Library of Power Semiconductors”, IEEE Open Journal of Power Electronics, vol. 1, pp. 431-444, 2020. (PDF)
High voltage wide bandgap (WBG) devices, such as Silicon Carbine (SiC) and Gallium Nitride (GaN), are under characterized and modelled. And a high voltage and high current fully automatic power semiconductor dynamic characterization testbed has been implemented.
Suggested Reading - Y. Xu, C. Ho, A. Ghosh, and D. Muthumuni “An Electrical Transient Model of IGBT-Diode Switching Cell for Power Semiconductor Loss Estimation in Electromagnetic Transient Simulation”, IEEE Trans. on Power Electronics, vol. 35, no. 3, pp. 2979-2989, Mar. 2020. (PDF)
